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MtronPTI组件和子组件设计和测试能力XO5082-020SR

来源：http://www.yijindz.com 作者：亿金电子 2024年04月11

MtronPTI组件和子组件设计和测试能力XO5082-020SR
MtronPTI高功率处理空间级组件和子组件设计和测试能力

MtronPTI在卫星平台和载人飞船方面获得了超过125项设计胜利。凭借支持低地球轨道、中地球轨道和地球同步轨道应用的专业知识，MtronPTI进口晶振公司拥有一支成熟的团队和久经考验的记录，可以满足苛刻的空间要求。

随着对高功率空间级发射机需求的不断发展，高功率处理空间级射频组件和子组件对任务的成功至关重要。由于多重放电等现象，这些在轨道卫星上使用的设备的性能与它们在海平面上的性能有很大不同。一些空间级应用既要求在外层空间的连续运行性能，也要求在进入空间期间的性能，即在温度范围内经历从环境压力到1×10-5托的压力变化以避免电晕放电。了解进入太空和在轨期间大功率处理射频组件和子组件的能力对于成功的太空任务至关重要。在早期阶段检测潜在风险可以防止灾难性故障。

除了现有的内部测试能力之外1为了测试空间级组件和射频组件，MtronPTI石英晶振公司投资了Spark3D等模拟工具，以在设计过程的早期阶段最大限度地提高真空下的功率处理能力。MtronPTI还投资了一个高空（低压）试验箱，以支持高功率处理射频组件和子组件测试。海拔试验箱的加入使MtronPTI能够在将测试产品暴露在接近1 x 10的压力下时调节环境试验箱的温度-5托。通过结合Spark3D模拟和高空测试，MtronPTI提高了任务成功的概率。

MtronPTI航天级产品符合美国国家标准协会/AIAA S-142-2016《航天器部件中预防多次放电击穿的标准/手册》。

注1 : MtronPTI广泛的内部测试能力包括根据MIL-STD-202的热冲击、方法107根据MIL-STD-202的端子强度、方法211根据MIL-STD-202的机械冲击、方法213根据MIL-STD-202的总泄漏测试、方法112根据MIL-STD-202的随机振动、方法214A根据MIL-STD-202的氦气、方法112根据MIL-STD-202的正弦振动

MtronPTI组件和子组件设计和测试能力XO5082-020SR

MtronPTI High Power Handling Space Level Component and Sub-Assemblies Design and Testing Capabilities

MtronPTI has over 125 design wins across satellite platforms and manned spacecraft. With expertise supporting LEO, MEO and GEO applications, MtronPTI has a well-established team and a proven track record to meet demanding space requirements.

With the evolving need for high-power space-level transmitters, high-power handling space-level RF components and sub-assemblies are instrumental for mission success. The performance of these devices used in orbiting satellites are significantly different compared to how they perform at sea level due to phenomena like multipaction. Some space-level applications require both continuous operation performance in outer space as well as performance during the assent to space, i.e. undergoing a pressure change from ambient to 1 x 10-5 Torr over temperature to avoid corona discharge. Understanding the capability of the high-power handling RF components and sub-assemblies during the assent to space and in orbit is critical for successful space missions. Detecting potential risks at an early stage prevents a catastrophic failure.

In addition to existing in-house testing capabilities1 for testing space level components and RF assemblies, MtronPTI has invested in simulation tools like Spark3D™ to maximize power handling capability under vacuum in the early stages of the design process. MtronPTI has also invested in a altitude (hypobaric) chamber to support high power handling RF components and sub-assemblies testing. The incorporation of an altitude test chamber enables MtronPTI to adjust the temperature of the environmental test chamber while exposing the product under test to pressure approaching 1 x 10-5 Torr. By combining Spark3D simulations and altitude testing, MtronPTI enhances the probability of mission success.

MtronPTI space-level products comply with ANSI/AIAA S-142-2016, Standard/Handbook for Multipactor Breakdown Prevention in Spacecraft Components.

Note 1 : MtronPTI’s extensive in-house test capabilities include Thermal Shock per MIL-STD-202, Method 107 • Terminal Strength per MIL-STD-202, Method 211 • Mechanical Shock per MIL-STD-202, Method 213 • Gross Leak Testing per MIL-STD-202, Method 112 • Random Vibration per MIL-STD-202, Method 214A • Fine Leak Testing – Helium per MIL-STD-202, Method 112 • Sinusoidal Vibration per MIL-STD-202, Method 201 and 204 • PIND (Particle Impact Noise Detection) per MIL-STD-202, Method 217 • Other Miscellaneous Testing including: Life, Immersion, Humidity, Barometric Pressure, Solderability • Dielectric Withstanding Voltage, Insulation Resistance, RF Testing 100 kHz to 40 GHz.

产品编码	晶振代理商	型号	振荡器类型	频率稳定性	频率（MHz）
XO5085-012R	MtronPTI晶振	XO5085	OCXO	±100 ppb	100MHz
XO5083-053R	MtronPTI晶振	XO5080	OCXO	±10 ppb	10MHz
XO5083-053V	MtronPTI晶振	XO5080	OCXO	±10 ppb	10MHz
XO5084-019	MtronPTI晶振	XO5080	OCXO	±10 ppb	10MHz
XO5084-031R	MtronPTI晶振	XO5080	OCXO	±20 ppb	12.8MHz
XO5084-057SR	MtronPTI晶振	XO5080	OCXO	±29 ppb	10MHz
XO5081-015R	MtronPTI晶振	XO5080	OCXO	±1 ppm	100MHz
XO5081-047R	MtronPTI晶振	XO5080	OCXO	±0.5 ppm	80MHz
XO5081-048SR	MtronPTI晶振	XO5080	OCXO	±50 ppb	40MHz
XO5081-062	MtronPTI晶振	XO5080	OCXO	±0.2 ppm	100MHz
XO5081-067R	MtronPTI晶振	XO5080	OCXO	±0.2 ppm	100MHz
XO5081-068	MtronPTI晶振	XO5080	OCXO	±0.2 ppm	100MHz
XO5082-016R	MtronPTI晶振	XO5080	OCXO	±280 ppb	100MHz
XO5082-020SR	MtronPTI晶振	XO5080	OCXO	±0.3 ppm	100MHz
XO5083-020	MtronPTI晶振	XO5080	OCXO晶振	±10 ppb	10MHz
XO5083-028R	MtronPTI晶振	XO5080	OCXO	±10 ppb	10MHz
XO5083-046R	MtronPTI晶振	XO5080	OCXO	±10 ppb	10MHz
XO5083-051R	MtronPTI晶振	XO5080	OCXO	±10 ppb	10MHz
XO5083-052R	MtronPTI晶振	XO5080	OCXO	±5 ppb	10MHz
XO5083-059R	MtronPTI晶振	XO5080	OCXO	±5 ppb	10MHz
XO5083-064	MtronPTI晶振	XO5080	OCXO	±10 ppb	10MHz
XO5083-067SR	MtronPTI晶振	XO5080	OCXO	±20 ppb	10MHz
XO5083-078SR	MtronPTI晶振	XO5080	OCXO	±20 ppb	10MHz
XO5083-079SR	MtronPTI晶振	XO5080	OCXO	±20 ppb	10MHz
XO5083-081R	MtronPTI晶振	XO5080	OCXO	±10 ppb	10MHz
XO5083-104R	MtronPTI晶振	XO5080	OCXO	±10 ppb	10MHz
XO5083-106R	MtronPTI晶振	XO5080	OCXO	±10 ppb	10MHz
XO5083-108R	MtronPTI晶振	XO5080	OCXO	±25 ppb	10MHz
XO5083-113R	MtronPTI晶振	XO5080	OCXO	±10 ppb	10MHz
XO5083-114R	MtronPTI晶振	XO5080	OCXO	±10 ppb	10MHz
XO5083-118SR	MtronPTI晶振	XO5080	OCXO	±20 ppb	10MHz
XO5084-034SR	MtronPTI晶振	XO5080	OCXO	±10 ppb	10MHz
XO5084-043R	MtronPTI晶振	XO5080	OCXO	±10 ppb	12.8MHz
XO5084-044SR	MtronPTI晶振	XO5080	OCXO	±10 ppb	10MHz

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