Ecliptek用于节能MCU的音叉晶体EB13K2C2H-32.768K
来源:http://www.yijindz.com 作者:亿金电子 2022年05月05
在过去的两年中,供应链的挑战使得具有较低电镀负载的行业标准3.2x1.5mm和2.0x1.2mm音叉石英晶体的大批量供应变得非常复杂。但是,Abracon的1.6x1.0x0.5mmABS05镀4.0pF可以轻松替代当前节能MCU和其他大猩猩芯片组设计中的更大尺寸替代品,而不会牺牲性能要求或增加额外的设计压力。它还可以在较新的设计中进一步减少消耗的表面积。此外,设计人员可能希望在他们的设计中考虑全面、包罗万象的焊盘图案。
在过去的两年中,供应链的挑战使得具有较低电镀负载的行业标准3.2x1.5mm和2.0x1.2mm音叉石英晶体的大批量供应变得非常复杂。Abracon晶振考虑到这一挑战,开发了其微型ABS05系列的4.0pF镀层版本。
ECLIPTEK Crystal是频率控制市场公认的市场领导者。Ecliptek品牌专注于快速转向可编程晶体和MEMS振荡器设备,可缩短上市时间并消除较长的交货时间。Ecliptek由Abracon提供支持,Abracon提供最新的技术设计支持和全球供应链灵活性,以解决客户当今面临的独特挑战。
EB13K2C2H-32.768K | CMOS | 3.3Vdc | SMD2.0mmx2.5mm | ±100ppm | 0°Cto+70°C |
EB13K2D2H-32.768K | CMOS | 3.3Vdc | SMD2.0mmx2.5mm | ±50ppm | 0°Cto+70°C |
EB13K2E2H-32.768K | CMOS | 3.3Vdc | SMD2.0mmx2.5mm | ±25ppm | 0°Cto+70°C |
EB13K2F2H-32.768K | CMOS | 3.3Vdc | SMD2.0mmx2.5mm | ±20ppm | 0°Cto+70°C |
EB13K2G2H-32.768K | CMOS | 3.3Vdc | SMD2.0mmx2.5mm | ±100ppm | -40°Cto+85°C |
EB13K2H2H-32.768K | CMOS | 3.3Vdc | SMD2.0mmx2.5mm | ±50ppm | -40°Cto+85°C |
EB13K2J2H-32.768K | CMOS | 3.3Vdc | SMD2.0mmx2.5mm | ±25ppm | -40°Cto+85°C |
EB13K4C2H-32.768K | CMOS | 3.3Vdc | SMD2.5mmx3.2mm | ±100ppm | 0°Cto+70°C |
EB13K4D2H-32.768K | CMOS | 3.3Vdc | SMD2.5mmx3.2mm | ±50ppm | 0°Cto+70°C |
EB13K4E2H-32.768K | CMOS | 3.3Vdc | SMD2.5mmx3.2mm | ±25ppm | 0°Cto+70°C |
EB13K4G2H-32.768K | CMOS | 3.3Vdc | SMD2.5mmx3.2mm | ±100ppm | -40°Cto+85°C |
EB13K4H2H-32.768K | CMOS | 3.3Vdc | SMD2.5mmx3.2mm | ±50ppm | -40°Cto+85°C |
EB13K4J2H-32.768K | CMOS | 3.3Vdc | SMD2.5mmx3.2mm | ±25ppm | -40°Cto+85°C |
EB13K5C2H-32.768K | CMOS | 3.3Vdc | SMD3.2mmx5.0mm | ±100ppm | 0°Cto+70°C |
EB13K5D2H-32.768K | CMOS | 3.3Vdc | SMD3.2mmx5.0mm | ±50ppm | 0°Cto+70°C |
EB13K5E2H-32.768K | CMOS | 3.3Vdc | SMD3.2mmx5.0mm | ±25ppm | 0°Cto+70°C |
EB13K5F2H-32.768K | CMOS | 3.3Vdc | SMD3.2mmx5.0mm | ±20ppm | 0°Cto+70°C |
EB13K5G2H-32.768K | CMOS | 3.3Vdc | SMD3.2mmx5.0mm | ±100ppm | -40°Cto+85°C |
EB13K5H2H-32.768K | CMOS | 3.3Vdc | SMD3.2mmx5.0mm | ±50ppm | -40°Cto+85°C |
EB13K5J2H-32.768K | CMOS | 3.3Vdc | SMD3.2mmx5.0mm | ±25ppm | -40°Cto+85°C |
EB13K7C2H-32.768K | CMOS | 3.3Vdc | SMD5.0mmx7.0mm | ±100ppm | 0°Cto+70°C |
EB13K7D2H-32.768K | CMOS | 3.3Vdc | SMD5.0mmx7.0mm | ±50ppm | 0°Cto+70°C |
EB13K7E2H-32.768K | CMOS | 3.3Vdc | SMD5.0mmx7.0mm | ±25ppm | 0°Cto+70°C |
EB13K7F2H-32.768K | CMOS | 3.3Vdc | SMD5.0mmx7.0mm | ±20ppm | 0°Cto+70°C |
EB13K7G2H-32.768K | CMOS | 3.3Vdc | SMD5.0mmx7.0mm | ±100ppm | -40°Cto+85°C |
EB13K7H2H-32.768K | CMOS | 3.3Vdc | SMD5.0mmx7.0mm | ±50ppm | -40°Cto+85°C |
EB13K7J2H-32.768K | CMOS | 3.3Vdc | SMD5.0mmx7.0mm | ±25ppm | -40°Cto+85°C |
EB15K2C2H-32.768K | CMOS | 2.5Vdc | SMD2.0mmx2.5mm | ±100ppm | 0°Cto+70°C |
EB15K2D2H-32.768K | CMOS | 2.5Vdc | SMD2.0mmx2.5mm | ±50ppm | 0°Cto+70°C |
EB15K2E2H-32.768K | CMOS | 2.5Vdc | SMD2.0mmx2.5mm | ±25ppm | 0°Cto+70°C |
EB15K2F2H-32.768K | CMOS | 2.5Vdc | SMD2.0mmx2.5mm | ±20ppm | 0°Cto+70°C |
EB15K2G2H-32.768K | CMOS | 2.5Vdc | SMD2.0mmx2.5mm | ±100ppm | -40°Cto+85°C |
EB15K2H2H-32.768K | CMOS | 2.5Vdc | SMD2.0mmx2.5mm | ±50ppm | -40°Cto+85°C |
EB15K2J2H-32.768K | CMOS | 2.5Vdc | SMD2.0mmx2.5mm | ±25ppm | -40°Cto+85°C |
EB15K4C2H-32.768K | CMOS | 2.5Vdc | SMD2.5mmx3.2mm | ±100ppm | 0°Cto+70°C |
EB15K4D2H-32.768K | CMOS | 2.5Vdc | SMD2.5mmx3.2mm | ±50ppm | 0°Cto+70°C |
EB15K4E2H-32.768K | CMOS | 2.5Vdc | SMD2.5mmx3.2mm | ±25ppm | 0°Cto+70°C |
EB15K4G2H-32.768K | CMOS | 2.5Vdc | SMD2.5mmx3.2mm | ±100ppm | -40°Cto+85°C |
EB15K4H2H-32.768K | CMOS | 2.5Vdc | SMD2.5mmx3.2mm | ±50ppm | -40°Cto+85°C |
EB15K4J2H-32.768K | CMOS | 2.5Vdc | SMD2.5mmx3.2mm | ±25ppm | -40°Cto+85°C |
EB15K5C2H-32.768K | CMOS | 2.5Vdc | SMD3.2mmx5.0mm | ±100ppm | 0°Cto+70°C |
EB15K5D2H-32.768K | CMOS | 2.5Vdc | SMD3.2mmx5.0mm | ±50ppm | 0°Cto+70°C |
EB15K5E2H-32.768K | CMOS | 2.5Vdc | SMD3.2mmx5.0mm | ±25ppm | 0°Cto+70°C |
EB15K5F2H-32.768K | CMOS | 2.5Vdc | SMD3.2mmx5.0mm | ±20ppm | 0°Cto+70°C |
EB15K5G2H-32.768K | CMOS | 2.5Vdc | SMD3.2mmx5.0mm | ±100ppm | -40°Cto+85°C |
EB15K5H2H-32.768K | CMOS | 2.5Vdc | SMD3.2mmx5.0mm | ±50ppm | -40°Cto+85°C |
EB15K5J2H-32.768K | CMOS | 2.5Vdc | SMD3.2mmx5.0mm | ±25ppm | -40°Cto+85°C |
EB15K7C2H-32.768K | CMOS | 2.5Vdc | SMD5.0mmx7.0mm | ±100ppm | 0°Cto+70°C |
EB15K7D2H-32.768K | CMOS | 2.5Vdc | SMD5.0mmx7.0mm | ±50ppm | 0°Cto+70°C |
EB15K7E2H-32.768K | CMOS | 2.5Vdc | SMD5.0mmx7.0mm | ±25ppm | 0°Cto+70°C |
EB15K7F2H-32.768K | CMOS | 2.5Vdc | SMD5.0mmx7.0mm | ±20ppm | 0°Cto+70°C |
EB15K7G2H-32.768K | CMOS | 2.5Vdc | SMD5.0mmx7.0mm | ±100ppm | -40°Cto+85°C |
EB15K7H2H-32.768K | CMOS | 2.5Vdc | SMD5.0mmx7.0mm | ±50ppm | -40°Cto+85°C |
EB15K7J2H-32.768K | CMOS | 2.5Vdc | SMD5.0mmx7.0mm | ±25ppm | -40°Cto+85°C |
EB16K2C2H-32.768K | CMOS | 1.8Vdc | SMD2.0mmx2.5mm | ±100ppm | 0°Cto+70°C |
EB16K2D2H-32.768K | CMOS | 1.8Vdc | SMD2.0mmx2.5mm | ±50ppm | 0°Cto+70°C |
EB16K2E2H-32.768K | CMOS | 1.8Vdc | SMD2.0mmx2.5mm | ±25ppm | 0°Cto+70°C |
EB16K2F2H-32.768K | CMOS | 1.8Vdc | SMD2.0mmx2.5mm | ±20ppm | 0°Cto+70°C |
EB16K2G2H-32.768K | CMOS | 1.8Vdc | SMD2.0mmx2.5mm | ±100ppm | -40°Cto+85°C |
EB16K2H2H-32.768K | CMOS | 1.8Vdc | SMD2.0mmx2.5mm | ±50ppm | -40°Cto+85°C |
Abracon的ABS07系列3.2x15x0.9毫米音叉石英晶体已成为从工业和医疗电子产品到消费物联网小工具的广泛应用中使用的工作室解决方案。随着下一代MCU的使用已经站稳脚跟,对ABS07的较低电镀负载(低至4.0pF)版本的需求获得了动力。
同时,业界不断追求终端产品设计小型化的趋势已经让位于以Abracon的ABS06系列产品为代表的2.0x1.2x0.6毫米音叉石英晶体的需求。特别是Abracon的4.0pF电镀负载的ABS06-107引起了广泛关注。它提供了较低电镀负载与优化等效串联电阻(ESR)性能的独特组合,使其非常适合节能大猩猩芯片。
EB16K2J2H-32.768K | CMOS | 1.8Vdc | SMD2.0mmx2.5mm | ±25ppm | -40°Cto+85°C |
EB16K4C2H-32.768K | CMOS | 1.8Vdc | SMD2.5mmx3.2mm | ±100ppm | 0°Cto+70°C |
EB16K4D2H-32.768K | CMOS | 1.8Vdc | SMD2.5mmx3.2mm | ±50ppm | 0°Cto+70°C |
EB16K4E2H-32.768K | CMOS | 1.8Vdc | SMD2.5mmx3.2mm | ±25ppm | 0°Cto+70°C |
EB16K4G2H-32.768K | CMOS | 1.8Vdc | SMD2.5mmx3.2mm | ±100ppm | -40°Cto+85°C |
EB16K4H2H-32.768K | CMOS | 1.8Vdc | SMD2.5mmx3.2mm | ±50ppm | -40°Cto+85°C |
EB16K4J2H-32.768K | CMOS | 1.8Vdc | SMD2.5mmx3.2mm | ±25ppm | -40°Cto+85°C |
EMRB61B-32.768K | CMOS | 1.8Vdc | SMD1.2mmx2.0mm | ±75ppm | -10°Cto+70°C |
EMRB61C-32.768K | CMOS | 1.8Vdc | SMD1.2mmx2.0mm | ±100ppm | -40°Cto+85°C |
EMRB62B-32.768K | CMOS | 2.5Vdc | SMD1.2mmx2.0mm | ±75ppm | -10°Cto+70°C |
EMRB62C-32.768K | CMOS | 2.5Vdc | SMD1.2mmx2.0mm | ±100ppm | -40°Cto+85°C |
EMRB63B-32.768K | CMOS | 3.3Vdc | SMD1.2mmx2.0mm | ±75ppm | -10°Cto+70°C |
EMRB63C-32.768K | CMOS | 3.3Vdc | SMD1.2mmx2.0mm | ±100ppm | -40°Cto+85°C |
EMRB64B-32.768K | CMOS | 2.8Vdc | SMD1.2mmx2.0mm | ±75ppm | -10°Cto+70°C |
EMRB64C-32.768K | CMOS | 2.8Vdc | SMD1.2mmx2.0mm | ±100ppm | -40°Cto+85°C |
EMRB65B-32.768K | CMOS | 3.0Vdc | SMD1.2mmx2.0mm | ±75ppm | -10°Cto+70°C |
EMRB65C-32.768K | CMOS | 3.0Vdc | SMD1.2mmx2.0mm | ±100ppm | -40°Cto+85°C |
EMRB81B-32.768K | CMOS | 1.8Vdc | CSP0.8mmx1.5mm | ±75ppm | -10°Cto+70°C |
EMRB81C-32.768K | CMOS | 1.8Vdc | CSP0.8mmx1.5mm | ±100ppm | -40°Cto+85°C |
EMRB82B-32.768K | CMOS | 2.5Vdc | CSP0.8mmx1.5mm | ±75ppm | -10°Cto+70°C |
EMRB82C-32.768K | CMOS | 2.5Vdc | CSP0.8mmx1.5mm | ±100ppm | -40°Cto+85°C |
EMRB83B-32.768K | CMOS | 3.3Vdc | CSP0.8mmx1.5mm | ±75ppm | -10°Cto+70°C |
EMRB83C-32.768K | CMOS | 3.3Vdc | CSP0.8mmx1.5mm | ±100ppm | -40°Cto+85°C |
EMRB84B-32.768K | CMOS | 2.8Vdc | CSP0.8mmx1.5mm | ±75ppm | -10°Cto+70°C |
EMRB84C-32.768K | CMOS | 2.8Vdc | CSP0.8mmx1.5mm | ±100ppm | -40°Cto+85°C |
EMRB85B-32.768K | CMOS | 3.0Vdc | CSP0.8mmx1.5mm | ±75ppm | -10°Cto+70°C |
EMRB85C-32.768K | CMOS | 3.0Vdc | CSP0.8mmx1.5mm | ±100ppm | -40°Cto+85°C |
然而,1.6x1.0x0.5mm的ABS05系列可以轻松替换当前设计中较大尺寸的ABS06和ABS07系列,而不会牺牲性能要求或增加额外的设计压力。它还可以在较新的设计中进一步减少消耗的表面积。
EMTB81A3D-32.768K | CMOS | 1.8Vdc | CSP0.8mmx1.5mm | ±5.0ppm | 0°Cto+70°C |
EMTB81A8D-32.768K | CMOS | 1.8Vdc | CSP0.8mmx1.5mm | ±5.0ppm | -40°Cto+85°C |
EMTB82A3D-32.768K | CMOS | 2.5Vdc | CSP0.8mmx1.5mm | ±5.0ppm | 0°Cto+70°C |
EMTB82A8D-32.768K | CMOS | 2.5Vdc | CSP0.8mmx1.5mm | ±5.0ppm | -40°Cto+85°C |
EMTB83A3D-32.768K | CMOS | 3.3Vdc | CSP0.8mmx1.5mm | ±5.0ppm | 0°Cto+70°C |
EMTB83A8D-32.768K | CMOS | 3.3Vdc | CSP0.8mmx1.5mm | ±5.0ppm | -40°Cto+85°C |
EMTB84A3D-32.768K | CMOS | 2.8Vdc | CSP0.8mmx1.5mm | ±5.0ppm | 0°Cto+70°C |
EMTB84A8D-32.768K | CMOS | 2.8Vdc | CSP0.8mmx1.5mm | ±5.0ppm | -40°Cto+85°C |
EMTB85A3D-32.768K | CMOS | 3.0Vdc | CSP0.8mmx1.5mm | ±5.0ppm | 0°Cto+70°C |
EMTB85A8D-32.768K | CMOS | 3.0Vdc | CSP0.8mmx1.5mm | ±5.0ppm | -40°Cto+85°C |
EQTB31D1DH-32.768K | CMOS | 1.8Vdc | SMD2.5mmx3.2mm | ±5.0ppm | 0°Cto+50°C |
EQTB31D2DH-32.768K | CMOS | 1.8Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -10°Cto+60°C |
EQTB31D3DH-32.768K | CMOS | 1.8Vdc | SMD2.5mmx3.2mm | ±5.0ppm | 0°Cto+70°C |
EQTB31D4DH-32.768K | CMOS | 1.8Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -20°Cto+70°C |
EQTB31D5DH-32.768K | CMOS | 1.8Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -30°Cto+60°C |
EQTB31D6DH-32.768K | CMOS | 1.8Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -30°Cto+75°C |
EQTB31D7DH-32.768K | CMOS | 1.8Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -30°Cto+85°C |
EQTB31D8DH-32.768K | CMOS | 1.8Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -40°Cto+85°C |
EQTB32D1DH-32.768K | CMOS | 2.5Vdc | SMD2.5mmx3.2mm | ±5.0ppm | 0°Cto+50°C |
EQTB32D2DH-32.768K | CMOS | 2.5Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -10°Cto+60°C |
采用最先进的调谐技术,ABS05器件现在可提供±20ppm和±25ppm的设置容差,有效的振荡器环路负载电容为4.0pF。此外,ESR经过优化以保持最大90kΩ的阈值,在与最新的节能MCU和其他大猩猩芯片组配合时实现稳健运行。
此外,由于最近的供应链问题,设计人员可能希望在他们的设计中考虑全面、包罗万象的焊盘图案。这种方法通过在同一布局中使用ABS07、ABS06或ABS05封装来满足设计要求,从而提供了设计灵活性。
EQTB32D3DH-32.768K | CMOS | 2.5Vdc | SMD2.5mmx3.2mm | ±5.0ppm | 0°Cto+70°C |
EQTB32D4DH-32.768K | CMOS | 2.5Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -20°Cto+70°C |
EQTB32D5DH-32.768K | CMOS | 2.5Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -30°Cto+60°C |
EQTB32D6DH-32.768K | CMOS | 2.5Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -30°Cto+75°C |
EQTB32D7DH-32.768K | CMOS | 2.5Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -30°Cto+85°C |
EQTB32D8DH-32.768K | CMOS | 2.5Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -40°Cto+85°C |
EQTB33D1DH-32.768K | CMOS | 3.3Vdc | SMD2.5mmx3.2mm | ±5.0ppm | 0°Cto+50°C |
EQTB33D2DH-32.768K | CMOS | 3.3Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -10°Cto+60°C |
EQTB33D3DH-32.768K | CMOS | 3.3Vdc | SMD2.5mmx3.2mm | ±5.0ppm | 0°Cto+70°C |
EQTB33D4DH-32.768K | CMOS | 3.3Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -20°Cto+70°C |
EQTB33D5DH-32.768K | CMOS | 3.3Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -30°Cto+60°C |
EQTB33D6DH-32.768K | CMOS | 3.3Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -30°Cto+75°C |
EQTB33D7DH-32.768K | CMOS | 3.3Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -30°Cto+85°C |
EQTB33D8DH-32.768K | CMOS | 3.3Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -40°Cto+85°C |
EQTB35D1DH-32.768K | CMOS | 3.0Vdc | SMD2.5mmx3.2mm | ±5.0ppm | 0°Cto+50°C |
EQTB35D2DH-32.768K | CMOS | 3.0Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -10°Cto+60°C |
EQTB35D3DH-32.768K | CMOS | 3.0Vdc | SMD2.5mmx3.2mm | ±5.0ppm | 0°Cto+70°C |
EQTB35D4DH-32.768K | CMOS | 3.0Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -20°Cto+70°C |
EQTB35D5DH-32.768K | CMOS | 3.0Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -30°Cto+60°C |
EQTB35D6DH-32.768K | CMOS | 3.0Vdc | SMD2.5mmx3.2mm | ±5.0ppm | -30°Cto+75°C |
Abracon,LLC成立于1992年,是无源元件的行业领导者,通过全球分销网络提供频率控制和定时设备、射频和天线以及电感器和连接解决方??案。Abracon总部位于德克萨斯州斯派斯伍德,在全球拥有销售、工程和运营团队。Abracon晶振以服务、质量和技术专长为公司核心,为AELCrystals、Ecliptek、Fox、ILSI和ProAnt品牌提供支持,同时在通信、运输、工业、医疗、消费、航空航天等市场实现创新的互联物联网解决方案和防御,以及超越。访问www.yijindz.com了解更多信息。
EQTB35D7DH-32.768K | CMOS | 3.0Vdc | SMD 2.5mm x 3.2mm | ±5.0ppm | -30°C to +85°C |
EQTB35D8DH-32.768K | CMOS | 3.0Vdc | SMD 2.5mm x 3.2mm | ±5.0ppm | -40°C to +85°C |
EQTB3AD1DH-32.768K | CMOS | 5.0Vdc | SMD 2.5mm x 3.2mm | ±5.0ppm | 0°C to +50°C |
EQTB3AD2DH-32.768K | CMOS | 5.0Vdc | SMD 2.5mm x 3.2mm | ±5.0ppm | -10°C to +60°C |
EQTB3AD3DH-32.768K | CMOS | 5.0Vdc | SMD 2.5mm x 3.2mm | ±5.0ppm | 0°C to +70°C |
EQTB3AD4DH-32.768K | CMOS | 5.0Vdc | SMD 2.5mm x 3.2mm | ±5.0ppm | -20°C to +70°C |
EQTB3AD5DH-32.768K | CMOS | 5.0Vdc | SMD 2.5mm x 3.2mm | ±5.0ppm | -30°C to +60°C |
EQTB3AD6DH-32.768K | CMOS | 5.0Vdc | SMD 2.5mm x 3.2mm | ±5.0ppm | -30°C to +75°C |
EQTB3AD7DH-32.768K | CMOS | 5.0Vdc | SMD 2.5mm x 3.2mm | ±5.0ppm | -30°C to +85°C |
EQTB3AD8DH-32.768K | CMOS | 5.0Vdc | SMD 2.5mm x 3.2mm | ±5.0ppm | -40°C to +85°C |
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