TRANSKO水晶应用笔记
来源：http://www.yijindz.com 作者：亿金电子 2022年05月27
订购水晶时需要提供哪些基本信息？
一般我们要求客户提供标称频率、切割角度类型（AT/BT）、支架或封装类型、电阻（ESR）、频率公差、
频率稳定性，负载电容，工作温度范围，驱动功率，老化等。客户也可以在下订单时指定其他特定规格或要求（如果有）。
什么是AT或BT削减？| 531EC622M080DG | Silicon晶振 | Si531 | 622.08MHz | 2.5V | ±7ppm |
| 531FC622M080DG | Silicon晶振 | Si531 | 622.08MHz | 2.5V | ±7ppm |
| 531FC311M040DG | Silicon晶振 | Si531 | 311.04MHz | 2.5V | ±7ppm |
| 530BC311M040DG | Silicon晶振 | Si530 | 311.04MHz | 3.3V | ±7ppm |
| 531BC622M080DG | Silicon晶振 | Si531 | 622.08MHz | 3.3V | ±7ppm |
| 531FC312M500DG | Silicon晶振 | Si531 | 312.5MHz | 2.5V | ±7ppm |
| 530EC622M080DG | Silicon晶振 | Si530 | 622.08MHz | 2.5V | ±7ppm |
| 531EC312M500DG | Silicon晶振 | Si531 | 312.5MHz | 2.5V | ±7ppm |
| 530BC622M080DG | Silicon晶振 | Si530 | 622.08MHz | 3.3V | ±7ppm |
| 531AC250M000DG | Silicon晶振 | Si531 | 250MHz | 3.3V | ±7ppm |
| 530AC311M040DG | Silicon晶振 | Si530 | 311.04MHz | 3.3V | ±7ppm |
| 530FC312M500DG | Silicon晶振 | Si530 | 312.5MHz | 2.5V | ±7ppm |
| 531EC250M000DG | Silicon晶振 | Si531 | 250MHz | 2.5V | ±7ppm |
| 530AC312M500DG | Silicon晶振 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 530EC250M000DG | Silicon晶振 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530AC250M000DG | Silicon晶振 | Si530 | 250MHz | 3.3V | ±7ppm |
| 530FC250M000DG | Silicon晶振 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530BC312M500DG | Silicon晶振 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 531BC312M500DG | Silicon晶振 | Si531 | 312.5MHz | 3.3V | ±7ppm |
| 530FC50M0000DG | Silicon晶振 | Si530 | 50MHz | 2.5V | ±7ppm |
| 535AB125M000DG | Silicon晶振 | Si535 | 125MHz | 3.3V | ±20ppm |
| 501AAA27M0000DAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501AAA27M0000DAG | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501JCA100M000CAG | Silicon晶振 | Si501 | 100MHz | 3.3V | ±20ppm |
| 501JCA100M000BAG | Silicon晶振 | Si501 | 100MHz | 3.3V | ±20ppm |
| 501HCAM032768BAF | Silicon晶振 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501BCAM032768DAG | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
| 501JCAM032768DAG | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
| SI50122-A1-GM | Silicon晶振 | SI50122-A1 | 100MHz | 2.25 V ~ 3.63 V | +100ppm |
| SI50122-A2-GM | Silicon晶振 | SI50122-A2 | 100MHz | 2.25 V ~ 3.63 V | +100ppm |
频率容差和频率稳定性之间的主要区别是什么？
有时，如果客户指定，“参考”频率可能指的是标称（规格）频率。
频率稳定性通常以百万分之几(ppm)表示。
晶振的频率容差定义为在指定温度（通常为+25°C（-2°C
当晶体不在规范规定的温度范围内工作时，其性能会发生什么变化？
晶振性能会受到影响。我们强烈不建议这样做。它会导致晶体的频率漂移。更糟糕的情况是它可能导致客户电路发生故障。
| 511SAA100M000AAG | Silicon晶振 | Si511 | 100MHz | 1.8V | ±50ppm |
| 510BCA148M500BAG | Silicon晶振 | Si510 | 148.5MHz | 3.3V | ±20ppm |
| 530AA156M250DG | Silicon晶振 | Si530 | 156.25MHz | 3.3V | ±50ppm |
| 531AA156M250DG | Silicon晶振 | Si531 | 156.25MHz | 3.3V | ±50ppm |
| 530FB100M000DG | Silicon晶振 | Si530 | 100MHz | 2.5V | ±20ppm |
| 511FBA125M000AAG | Silicon晶振 | Si511 | 125MHz | 2.5V | ±25ppm |
| 530BC125M000DG | Silicon晶振 | Si530 | 125MHz | 3.3V | ±7ppm |
| 535AB156M250DG | Silicon晶振 | Si535 | 156.25MHz | 3.3V | ±20ppm |
| 536FB125M000DG | Silicon晶振 | Si536 | 125MHz | 2.5V | ±20ppm |
| 510BBA74M2500BAG | Silicon晶振 | Si510 | 74.25MHz | 3.3V | ±25ppm |
| 511ABA125M000BAG | Silicon晶振 | Si511 | 125MHz | 3.3V | ±25ppm |
| 510BBA100M000BAG | Silicon晶振 | Si510 | 100MHz | 3.3V | ±25ppm |
| 511ABA100M000BAG | Silicon晶振 | Si511 | 100MHz | 3.3V | ±25ppm |
| 510FBA125M000AAG | Silicon晶振 | Si510 | 125MHz | 2.5V | ±25ppm |
| 510ABA100M000AAG | Silicon晶振 | Si510 | 100MHz | 3.3V | ±25ppm |
| 511BBA200M000AAG | Silicon晶振 | Si511 | 200MHz | 3.3V | ±25ppm |
| 531BC106M250DG | Silicon晶振 | Si531 | 106.25MHz | 3.3V | ±7ppm |
| 531EC125M000DG | Silicon晶振 | Si531 | 125MHz | 2.5V | ±7ppm |
| 511ABA74M2500BAG | Silicon晶振 | Si511 | 74.25MHz | 3.3V | ±25ppm |
| 510FBA74M2500BAG | Silicon晶振 | Si510 | 74.25MHz | 2.5V | ±25ppm |
| 510ABA100M000BAG | Silicon晶振 | Si510 | 100MHz | 3.3V | ±25ppm |
| 510FBA100M000AAG | Silicon晶振 | Si510 | 100MHz | 2.5V | ±25ppm |
| 511BBA74M2500AAG | Silicon晶振 | Si511 | 74.25MHz | 3.3V | ±25ppm |
| 511ABA106M250AAG | Silicon晶振 | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 510ABA148M500BAG | Silicon晶振 | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 511BBA155M520BAG | Silicon晶振 | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 510ABA156M250BAG | Silicon晶振 | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 510FBA156M250BAG | Silicon晶振 | Si510 | 156.25MHz | 2.5V | ±25ppm |
| 511FBA000110BAG | Silicon晶振 | Si511 | 148.35165MHz | 2.5V | ±25ppm |
| 510BBA155M520AAG | Silicon晶振 | Si510 | 155.52MHz | 3.3V | ±25ppm |
| 510BBA000110AAG | Silicon晶振 | Si510 | 148.35165MHz | 3.3V | ±25ppm |
| 511ABA000110AAG | Silicon晶振 | Si511 | 148.35165MHz | 3.3V | ±25ppm |
| 511BBA000110AAG | Silicon晶振 | Si511 | 148.35165MHz | 3.3V | ±25ppm |
| 511FBA000110AAG | Silicon晶振 | Si511 | 148.35165MHz | 2.5V | ±25ppm |
| 510BBA212M500BAG | Silicon晶振 | Si510 | 212.5MHz | 3.3V | ±25ppm |
晶振性能会受到影响。我们强烈不建议这样做。它会导致晶体的频率漂移。更糟糕的情况是它可能导致客户电路发生故障。
| 511ABA212M500BAG | Silicon晶振 | Si511 | 212.5MHz | 3.3V | ±25ppm |
| 511BBA212M500BAG | Silicon晶振 | Si511 | 212.5MHz | 3.3V | ±25ppm |
| 511FBA212M500AAG | Silicon晶振 | Si511 | 212.5MHz | 2.5V | ±25ppm |
| 510BBA200M000AAG | Silicon晶振 | Si510 | 200MHz | 3.3V | ±25ppm |
| 511BBA212M500AAG | Silicon晶振 | Si511 | 212.5MHz | 3.3V | ±25ppm |
| 510ABA200M000AAG | Silicon晶振 | Si510 | 200MHz | 3.3V | ±25ppm |
| 511ABA200M000AAG | Silicon晶振 | Si511 | 200MHz | 3.3V | ±25ppm |
| 530EC125M000DG | Silicon晶振 | Si530 | 125MHz | 2.5V | ±7ppm |
| 531FC106M250DG | Silicon晶振 | Si531 | 106.25MHz | 2.5V | ±7ppm |
| 531FC187M500DG | Silicon晶振 | Si531 | 187.5MHz | 2.5V | ±7ppm |
| 531FC000110DG | Silicon晶振 | Si531 | 148.35165MHz | 2.5V | ±7ppm |
| 531EC200M000DG | Silicon晶振 | Si531 | 200MHz | 2.5V | ±7ppm |
| 531AC000110DG | Silicon晶振 | Si531 | 148.35165MHz | 3.3V | ±7ppm |
| 531AC148M500DG | Silicon晶振 | Si531 | 148.5MHz | 3.3V | ±7ppm |
| 535EB156M250DG | Silicon晶振 | Si535 | 156.25MHz | 2.5V | ±20ppm |
| 510CBA25M0000BAG | Silicon晶振 | Si510 | 25MHz | 3.3V | ±25ppm |
| 511SBA156M250BAG | Silicon晶振 | Si511 | 156.25MHz | 1.8V | ±50ppm |
| 501JAA24M0000DAF | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm |
| 501BAA16M0000DAF | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm |
| 501JAA24M0000CAF | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm |
| 501AAA27M0000CAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501AAA25M0000BAF | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501JAA40M0000CAF | Silicon晶振 | Si501 | 40MHz | 3.3V | ±50ppm |
| 501AAA24M0000BAF | Silicon晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501EAA48M0000CAF | Silicon晶振 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501AAA27M0000BAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501EAA48M0000BAF | Silicon晶振 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501JAA25M0000BAF | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm |
| 501BAA50M0000BAF | Silicon晶振 | Si501 | 50MHz | 3.3V | ±50ppm |
| 501AAA50M0000CAF | Silicon晶振 | Si501 | 50MHz | 1.7 V ~ 3.6 V | ±50ppm |
-Crystal主要具有其“频率稳定性”特性，这是由于如何将石英棒以某个预先定向的角度切割成晶体晶片的结果。今天最流行和广泛使用的一种是AT-Cut。
AT-cut在Y轴负方向上与Z轴的切削角约为35X15'，而BT切削在Y轴正方向上与Z轴的切削角为-45X。为了便于理解，下面显示了两个切割的图表。
杂散频率会产生什么影响？| 501EAA48M0000DAG | Silicon晶振 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501AAA25M0000DAG | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501HCA27M0000DAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501ABA8M00000BAF | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm |
| 501HCA12M0000DAF | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JCA24M0000DAF | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm |
| 501AAA24M0000BAG | Silicon晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501BCA16M0000BAF | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
| 501JCA24M0000CAF | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm |
| 501HCA26M0000BAF | Silicon晶振 | Si501 | 26MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JAA25M0000BAG | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm |
| 501BCA16M0000CAF | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
| 501EAA48M0000CAG | Silicon晶振 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501BAA16M0000BAG | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm |
| 501BAA16M0000CAG | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm |
| 501JAA24M0000BAG | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm |
| 501AAA27M0000BAG | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501ACA10M0000CAF | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JAA40M0000BAG | Silicon晶振 | Si501 | 40MHz | 3.3V | ±50ppm |
| 501ACA10M0000BAF | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JCA10M0000BAF | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm |
| 501HCA12M0000BAF | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JCA25M0000CAF | Silicon晶振 | Si501 | 25MHz | 3.3V | ±20ppm |
| 501HCA27M0000BAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501AAA50M0000BAG | Silicon晶振 | Si501 | 50MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501ABA8M00000BAG | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm |
| 501HCA27M0000DAG | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501ABA8M00000CAG | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm |
| 501JCA10M0000BAG | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm |
| 501ACA10M0000BAG | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JCA20M0000CAG | Silicon晶振 | Si501 | 20MHz | 3.3V | ±20ppm |
| 501BCA16M0000BAG | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
| 501BCA16M0000CAG | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
| 501JCA100M000DAF | Silicon晶振 | Si501 | 100MHz | 3.3V | ±20ppm |
| 501JCA100M000CAF | Silicon晶振 | Si501 | 100MHz | 3.3V | ±20ppm |
什么是拉力？
晶体的牵引能力是作为负载电容函数的频率变化的量度。
电路设计人员可以通过改变或改变晶体的负载电容来实现工作频率范围。工作频率范围由晶体在给定（变化）负载电容范围内的牵引能力决定。
什么是杂散频率？
| 501JCA100M000BAF | Silicon晶振 | Si501 | 100MHz | 3.3V | ±20ppm |
| 501JCAM032768DAF | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
| 501HCAM032768DAF | Silicon晶振 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JCAM032768CAF | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
| 501BCAM032768BAF | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
| 501BCAM032768CAF | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
| 501BCAM032768CAG | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
| 500DLAA125M000ACF | Silicon晶振 | Si500D | 125MHz | 2.5V | ±150ppm |
| 500DLAA200M000ACF | Silicon晶振 | Si500D | 200MHz | 2.5V | ±150ppm |
| 510CBA100M000BAGR | Silicon晶振 | * | - | - | - |
| 510CBA125M000BAGR | Silicon晶振 | * | - | - | - |
| 510CBA25M0000BAGR | Silicon晶振 | * | - | - | - |
| 510GBA100M000BAGR | Silicon晶振 | * | - | - | - |
| 510GBA125M000BAGR | Silicon晶振 | * | - | - | - |
| 510GBA25M0000BAGR | Silicon晶振 | * | - | - | - |
| 510CBA100M000AAGR | Silicon晶振 | * | - | - | - |
| 510CBA125M000AAGR | Silicon晶振 | * | - | - | - |
| 510CBA25M0000AAGR | Silicon晶振 | * | - | - | - |
| 510GBA100M000AAGR | Silicon晶振 | * | - | - | - |
| 510GBA125M000AAGR | Silicon晶振 | * | - | - | - |
| 510CBA156M250BAGR | Silicon晶振 | * | - | - | - |
| 510GBA156M250BAGR | Silicon晶振 | * | - | - | - |
| 510CBA156M250AAGR | Silicon晶振 | * | - | - | - |
| 510GBA156M250AAGR | Silicon晶振 | * | - | - | - |
| 510CBA100M000BAG | Silicon晶振 | * | - | - | - |
晶体可能以与其基频或泛音频率无关的频率振动。这种不需要的频率被称为杂散频率。
在晶体设计和制造阶段，可以通过改变晶片尺寸、电极图案设计和调整晶片上的金属化来抑制杂散频率的影响。
| 510CBA125M000BAG | Silicon晶振 | * | - | - | - |
| 510GBA100M000BAG | Silicon晶振 | * | - | - | - |
| 510GBA125M000BAG | Silicon晶振 | * | - | - | - |
| 510GBA25M0000BAG | Silicon晶振 | * | - | - | - |
| 510CBA100M000AAG | Silicon晶振 | * | - | - | - |
| 510CBA125M000AAG | Silicon晶振 | * | - | - | - |
| 510CBA25M0000AAG | Silicon晶振 | * | - | - | - |
| 510GBA100M000AAG | Silicon晶振 | * | - | - | - |
| 510GBA125M000AAG | Silicon晶振 | * | - | - | - |
| 510ABA100M000BAGR | Silicon晶振 | Si510 | 100MHz | 3.3V | ±25ppm |
| 510ABA125M000BAGR | Silicon晶振 | Si510 | 125MHz | 3.3V | ±25ppm |
| 510BBA100M000BAGR | Silicon晶振 | Si510 | 100MHz | 3.3V | ±25ppm |
| 510BBA125M000BAGR | Silicon晶振 | Si510 | 125MHz | 3.3V | ±25ppm |
| 510FBA100M000BAGR | Silicon晶振 | Si510 | 100MHz | 2.5V | ±25ppm |
| 510FBA125M000BAGR | Silicon晶振 | Si510 | 125MHz | 2.5V | ±25ppm |
| 511ABA100M000BAGR | Silicon晶振 | Si511 | 100MHz | 3.3V | ±25ppm |
| 511ABA125M000BAGR | Silicon晶振 | Si511 | 125MHz | 3.3V | ±25ppm |
| 511BBA100M000BAGR | Silicon晶振 | Si511 | 100MHz | 3.3V | ±25ppm |
| 511BBA125M000BAGR | Silicon晶振 | Si511 | 125MHz | 3.3V | ±25ppm |
| 511FBA100M000BAGR | Silicon晶振 | Si511 | 100MHz | 2.5V | ±25ppm |
| 511FBA125M000BAGR | Silicon晶振 | Si511 | 125MHz | 2.5V | ±25ppm |
| 510ABA106M250BAGR | Silicon晶振 | Si510 | 106.25MHz | 3.3V | ±25ppm |
| 510BBA106M250BAGR | Silicon晶振 | Si510 | 106.25MHz | 3.3V | ±25ppm |
| 511ABA106M250BAGR | Silicon晶振 | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 511BBA106M250BAGR | Silicon晶振 | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 511FBA106M250BAGR | Silicon晶振 | Si511 | 106.25MHz | 2.5V | ±25ppm |
| 510ABA000149BAGR | Silicon晶振 | Si510 | 74.175824MHz | 3.3V | ±25ppm |
| 510ABA74M2500BAGR | Silicon晶振 | Si510 | 74.25MHz | 3.3V | ±25ppm |
| 510BBA000149BAGR | Silicon晶振 | Si510 | 74.175824MHz | 3.3V | ±25ppm |
| 510BBA74M2500BAGR | Silicon晶振 | Si510 | 74.25MHz | 3.3V | ±25ppm |
当杂散模式的信号电平与主模式一样强时，振荡器可能会在杂散模式而不是主模式上运行。这种现象称为模式跳变。
杂散模式通常定义为对主模式的电阻比或dB抑制。为了避免大多数振荡器的模式跳变，需要与主模式的电阻比为1.5或2.0。这大约相当于主模式下的-3dB至-6dB信号抑制。
| 510FBA000149BAGR | Silicon晶振 | Si510 | 74.175824MHz | 2.5V | ±25ppm |
| 510FBA74M2500BAGR | Silicon晶振 | Si510 | 74.25MHz | 2.5V | ±25ppm |
| 511ABA000149BAGR | Silicon晶振 | Si511 | 74.175824MHz | 3.3V | ±25ppm |
| 511ABA74M2500BAGR | Silicon晶振 | Si511 | 74.25MHz | 3.3V | ±25ppm |
| 511BBA000149BAGR | Silicon晶振 | Si511 | 74.175824MHz | 3.3V | ±25ppm |
| 511BBA74M2500BAGR | Silicon晶振 | Si511 | 74.25MHz | 3.3V | ±25ppm |
| 511FBA000149BAGR | Silicon晶振 | Si511 | 74.175824MHz | 2.5V | ±25ppm |
| 511FBA74M2500BAGR | Silicon晶振 | Si511 | 74.25MHz | 2.5V | ±25ppm |
| 510CBA156M250BAG | Silicon晶振 | * | - | - | - |
| 510GBA156M250BAG | Silicon晶振 | * | - | - | - |
| 510CBA156M250AAG | Silicon晶振 | * | - | - | - |
| 510GBA156M250AAG | Silicon晶振 | * | - | - | - |
| 510ABA100M000AAGR | Silicon晶振 | Si510 | 100MHz | 3.3V | ±25ppm |
| 510ABA125M000AAGR | Silicon晶振 | Si510 | 125MHz | 3.3V | ±25ppm |
| 510BBA100M000AAGR | Silicon晶振 | Si510 | 100MHz | 3.3V | ±25ppm |
| 510BBA125M000AAGR | Silicon晶振 | Si510 | 125MHz | 3.3V | ±25ppm |
| 510FBA100M000AAGR | Silicon晶振 | Si510 | 100MHz | 2.5V | ±25ppm |
| 510FBA125M000AAGR | Silicon晶振 | Si510 | 125MHz | 2.5V | ±25ppm |
| 511ABA100M000AAGR | Silicon晶振 | Si511 | 100MHz | 3.3V | ±25ppm |
| 511ABA125M000AAGR | Silicon晶振 | Si511 | 125MHz | 3.3V | ±25ppm |
| 511BBA100M000AAGR | Silicon晶振 | Si511 | 100MHz | 3.3V | ±25ppm |
| 511BBA125M000AAGR | Silicon晶振 | Si511 | 125MHz | 3.3V | ±25ppm |
| 511FBA100M000AAGR | Silicon晶振 | Si511 | 100MHz | 2.5V | ±25ppm |
| 511FBA125M000AAGR | Silicon晶振 | Si511 | 125MHz | 2.5V | ±25ppm |
| 510ABA106M250AAGR | Silicon晶振 | Si510 | 106.25MHz | 3.3V | ±25ppm |
为什么HC-49S晶体的拉力不如HC-49U晶体？
晶体的牵引能力通常与晶体坯上形成的电极尺寸有关。更大尺寸的晶体坯当然可以容纳更大的电极。HC-49S的毛坯尺寸比HC-49U小。
当晶体与振荡电路中给定的负载电容串联放置时，较大的电极通常会提供更宽的频率牵引范围。
什么是负载电容（CL）？
晶体的作用是放置在振荡电路中工作，以产生所需的振荡频率。当晶体位于振荡电路中时，它会在晶体的两个端子引线处看到一个“负载电容”。这种负载电容是出现在或呈现给晶体的整个振荡电路的等效电容效应。
| 510BBA106M250AAGR | Silicon晶振 | Si510 | 106.25MHz | 3.3V | ±25ppm |
| 510FBA106M250AAGR | Silicon晶振 | Si510 | 106.25MHz | 2.5V | ±25ppm |
| 511ABA106M250AAGR | Silicon晶振 | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 511BBA106M250AAGR | Silicon晶振 | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 511FBA106M250AAGR | Silicon晶振 | Si511 | 106.25MHz | 2.5V | ±25ppm |
| 510ABA000149AAGR | Silicon晶振 | Si510 | 74.175824MHz | 3.3V | ±25ppm |
| 510ABA74M2500AAGR | Silicon晶振 | Si510 | 74.25MHz | 3.3V | ±25ppm |
| 510BBA000149AAGR | Silicon晶振 | Si510 | 74.175824MHz | 3.3V | ±25ppm |
| 510BBA74M2500AAGR | Silicon晶振 | Si510 | 74.25MHz | 3.3V | ±25ppm |
| 510FBA000149AAGR | Silicon晶振 | Si510 | 74.175824MHz | 2.5V | ±25ppm |
| 510FBA74M2500AAGR | Silicon晶振 | Si510 | 74.25MHz | 2.5V | ±25ppm |
| 511ABA000149AAGR | Silicon晶振 | Si511 | 74.175824MHz | 3.3V | ±25ppm |
| 511ABA74M2500AAGR | Silicon晶振 | Si511 | 74.25MHz | 3.3V | ±25ppm |
| 511BBA000149AAGR | Silicon晶振 | Si511 | 74.175824MHz | 3.3V | ±25ppm |
| 511BBA74M2500AAGR | Silicon晶振 | Si511 | 74.25MHz | 3.3V | ±25ppm |
| 511FBA000149AAGR | Silicon晶振 | Si511 | 74.175824MHz | 2.5V | ±25ppm |
| 511FBA74M2500AAGR | Silicon晶振 | Si511 | 74.25MHz | 2.5V | ±25ppm |
| 510ABA156M250BAGR | Silicon晶振 | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 510FBA156M250BAGR | Silicon晶振 | Si510 | 156.25MHz | 2.5V | ±25ppm |
| 511ABA156M250BAGR | Silicon晶振 | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 511BBA156M250BAGR | Silicon晶振 | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 511FBA156M250BAGR | Silicon晶振 | Si511 | 156.25MHz | 2.5V | ±25ppm |
| 510ABA155M520BAGR | Silicon晶振 | Si510 | 155.52MHz | 3.3V | ±25ppm |
| 510BBA155M520BAGR | Silicon晶振 | Si510 | 155.52MHz | 3.3V | ±25ppm |
| 510FBA155M520BAGR | Silicon晶振 | Si510 | 155.52MHz | 2.5V | ±25ppm |
| 511ABA155M520BAGR | Silicon晶振 | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 511BBA155M520BAGR | Silicon晶振 | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 511FBA148M500BAGR | Silicon晶振 | Si511 | 148.5MHz | 2.5V | ±25ppm |
| 511FBA155M520BAGR | Silicon晶振 | Si511 | 155.52MHz | 2.5V | ±25ppm |
| 510ABA000110BAGR | Silicon晶振 | Si510 | 148.35165MHz | 3.3V | ±25ppm |
晶体的作用是放置在振荡电路中工作，以产生所需的振荡频率。当晶体位于振荡电路中时，它会在晶体的两个端子引线处看到一个“负载电容”。这种负载电容是出现在或呈现给晶体的整个振荡电路的等效电容效应。
| 510ABA148M500BAGR | Silicon晶振 | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510BBA000110BAGR | Silicon晶振 | Si510 | 148.35165MHz | 3.3V | ±25ppm |
| 510BBA148M500BAGR | Silicon晶振 | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510FBA000110BAGR | Silicon晶振 | Si510 | 148.35165MHz | 2.5V | ±25ppm |
| 510FBA148M500BAGR | Silicon晶振 | Si510 | 148.5MHz | 2.5V | ±25ppm |
| 511ABA000110BAGR | Silicon晶振 | Si511 | 148.35165MHz | 3.3V | ±25ppm |
| 511ABA148M500BAGR | Silicon晶振 | Si511 | 148.5MHz | 3.3V | ±25ppm |
| 511BBA000110BAGR | Silicon晶振 | Si511 | 148.35165MHz | 3.3V | ±25ppm |
| 511BBA148M500BAGR | Silicon晶振 | Si511 | 148.5MHz | 3.3V | ±25ppm |
| 511FBA000110BAGR | Silicon晶振 | Si511 | 148.35165MHz | 2.5V | ±25ppm |
| 510ABA156M250AAGR | Silicon晶振 | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 510BBA156M250AAGR | Silicon晶振 | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 510FBA156M250AAGR | Silicon晶振 | Si510 | 156.25MHz | 2.5V | ±25ppm |
| 511BBA156M250AAGR | Silicon晶振 | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 511FBA156M250AAGR | Silicon晶振 | Si511 | 156.25MHz | 2.5V | ±25ppm |
| 510ABA155M520AAGR | Silicon晶振 | Si510 | 155.52MHz | 3.3V | ±25ppm |
| 510BBA155M520AAGR | Silicon晶振 | Si510 | 155.52MHz | 3.3V | ±25ppm |
| 510FBA155M520AAGR | Silicon晶振 | Si510 | 155.52MHz | 2.5V | ±25ppm |
| 511ABA155M520AAGR | Silicon晶振 | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 511BBA155M520AAGR | Silicon晶振 | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 511FBA155M520AAGR | Silicon晶振 | Si511 | 155.52MHz | 2.5V | ±25ppm |
| 510ABA000110AAGR | Silicon晶振 | Si510 | 148.35165MHz | 3.3V | ±25ppm |
| 510ABA148M500AAGR | Silicon晶振 | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510BBA000110AAGR | Silicon晶振 | Si510 | 148.35165MHz | 3.3V | ±25ppm |
| 510BBA148M500AAGR | Silicon晶振 | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510FBA000110AAGR | Silicon晶振 | Si510 | 148.35165MHz | 2.5V | ±25ppm |
| 510FBA148M500AAGR | Silicon晶振 | Si510 | 148.5MHz | 2.5V | ±25ppm |
| 511ABA000110AAGR | Silicon晶振 | Si511 | 148.35165MHz | 3.3V | ±25ppm |
| 511ABA148M500AAGR | Silicon晶振 | Si511 | 148.5MHz | 3.3V | ±25ppm |
| 511BBA000110AAGR | Silicon晶振 | Si511 | 148.35165MHz | 3.3V | ±25ppm |
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